数字晶体管( BRT ) R1 = 10千欧, R2 = 10千? Digital Transistors BRT R1 = 10 k, R2 = 10 k
PNP Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
额定电压DC -50.0 V
额定电流 -100 mA
无卤素状态 Halogen Free
极性 PNP
耗散功率 0.4 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 35 @5mA, 10V
额定功率Max 246 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 400 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMUN2111LT3G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMUN2111LT1G 安森美 | 完全替代 | MMUN2111LT3G和MMUN2111LT1G的区别 |
MMUN2111LT1 安森美 | 类似代替 | MMUN2111LT3G和MMUN2111LT1的区别 |
FJV4102RMTF 安森美 | 类似代替 | MMUN2111LT3G和FJV4102RMTF的区别 |