MMUN2111LT3G

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MMUN2111LT3G概述

数字晶体管( BRT ) R1 = 10千欧, R2 = 10千? Digital Transistors BRT R1 = 10 k, R2 = 10 k

PNP Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MMUN2111LT3G中文资料参数规格
技术参数

额定电压DC -50.0 V

额定电流 -100 mA

无卤素状态 Halogen Free

极性 PNP

耗散功率 0.4 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 35 @5mA, 10V

额定功率Max 246 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 400 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MMUN2111LT3G
型号: MMUN2111LT3G
描述:数字晶体管( BRT ) R1 = 10千欧, R2 = 10千? Digital Transistors BRT R1 = 10 k, R2 = 10 k
替代型号MMUN2111LT3G
型号/品牌 代替类型 替代型号对比

MMUN2111LT3G

ON Semiconductor 安森美

当前型号

当前型号

MMUN2111LT1G

安森美

完全替代

MMUN2111LT3G和MMUN2111LT1G的区别

MMUN2111LT1

安森美

类似代替

MMUN2111LT3G和MMUN2111LT1的区别

FJV4102RMTF

安森美

类似代替

MMUN2111LT3G和FJV4102RMTF的区别

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