通用放大器晶体管 General Purpose Amplifier Transistors
Look no further than "s PNP general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V.
频率 80 MHz
额定电压DC -50.0 V
额定电流 -100 mA
针脚数 3
极性 PNP
耗散功率 200 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 200 @2mA, 6V
额定功率Max 200 mW
直流电流增益hFE 200
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MSA1162GT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MSA1162GT1 安森美 | 功能相似 | MSA1162GT1G和MSA1162GT1的区别 |
2SA1162-GRTE85L,F 东芝 | 功能相似 | MSA1162GT1G和2SA1162-GRTE85L,F的区别 |