MSD601-R: NPN 双极晶体管
Trans GP BJT NPN 50V 0.1A Automotive 3-Pin SC-59 T/R
得捷:
TRANS NPN 50V 0.1A SC59
立创商城:
MSD601-RT1G
艾睿:
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN MSD601-RT1G general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V.
安富利:
Trans GP BJT NPN 50V 0.1A 3-Pin SC-59 T/R
Verical:
Trans GP BJT NPN 50V 0.1A Automotive 3-Pin SC-59 T/R
Online Components:
Trans GP BJT NPN 50V 0.1A Automotive 3-Pin SC-59 T/R
额定电压DC 50.0 V
额定电流 100 mA
极性 NPN
耗散功率 0.2 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 210 @2mA, 10V
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MSD601-RT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MSD601-RT1 安森美 | 完全替代 | MSD601-RT1G和MSD601-RT1的区别 |
MSD601-RT2 安森美 | 类似代替 | MSD601-RT1G和MSD601-RT2的区别 |
MMBT6428 飞兆/仙童 | 功能相似 | MSD601-RT1G和MMBT6428的区别 |