MMUN2234LT1G

偏置电阻晶体管NPN硅表面贴装晶体管 Bias Resistor Transistor NPN Silicon Surface Mount Transistor

- 双极 BJT - 单，预偏置 NPN - 预偏压 50 V 100 mA 246 mW 表面贴装型 SOT-23-3（TO-236）

得捷:
TRANS PREBIAS NPN 50V SOT23-3

立创商城:
NPN 双极数字晶体管 BRT

欧时:
ON Semiconductor, MMUN2234LT1G

e络盟:
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 22 kohm, 47 kohm, 0.47 电阻比率

艾睿:
Are you looking to build a digital signal processing device? The NPN MMUN2234LT1G digital transistor, developed by ON Semiconductor, can provide a solution. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 400 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R

TME:
Transistor: NPN; bipolar; BRT; 50V; 0.1A; 246mW; SOT23; R1:22kΩ

Verical:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R

Newark:
# ON SEMICONDUCTOR  MMUN2234LT1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 22 kohm, 47 kohm, 0.47 Ratio, SOT-23

Win Source:
TRANS PREBIAS NPN 0.246W SOT23-3