晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm
- 双极 BJT - 单,预偏置 NPN - 预偏压 表面贴装型 SC-59
得捷:
TRANS PREBIAS NPN 50V 100MA SC59
立创商城:
MUN2240T1G
贸泽:
双极晶体管 - 预偏置 100mA 50V BRT NPN
e络盟:
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm
艾睿:
ON Semiconductor brings you their latest NPN MUN2240T1G digital transistor, a component that can easily provide you with most of the features of traditional BJT&s;s while maintaining a digital form. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 120@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 338 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R
Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-59 T/R
Verical:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-59 T/R
Win Source:
TRANS PREBIAS NPN 338MW SC59
额定电压DC 50.0 V
额定电流 100 mA
无卤素状态 Halogen Free
极性 NPN
耗散功率 0.338 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 120 @5mA, 10V
最大电流放大倍数hFE 160
额定功率Max 338 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 338 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.5 mm
高度 1.09 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MUN2240T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MUN2240T1 安森美 | 完全替代 | MUN2240T1G和MUN2240T1的区别 |
DTC144TT1 安森美 | 类似代替 | MUN2240T1G和DTC144TT1的区别 |
DTC144TT1G 安森美 | 类似代替 | MUN2240T1G和DTC144TT1G的区别 |