MUN2240T1G

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MUN2240T1G概述

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm

- 双极 BJT - 单,预偏置 NPN - 预偏压 表面贴装型 SC-59


得捷:
TRANS PREBIAS NPN 50V 100MA SC59


立创商城:
MUN2240T1G


贸泽:
双极晶体管 - 预偏置 100mA 50V BRT NPN


e络盟:
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm


艾睿:
ON Semiconductor brings you their latest NPN MUN2240T1G digital transistor, a component that can easily provide you with most of the features of traditional BJT&s;s while maintaining a digital form. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 120@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 338 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.


安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R


Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-59 T/R


Verical:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-59 T/R


Win Source:
TRANS PREBIAS NPN 338MW SC59


MUN2240T1G中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

无卤素状态 Halogen Free

极性 NPN

耗散功率 0.338 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 120 @5mA, 10V

最大电流放大倍数hFE 160

额定功率Max 338 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 338 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

长度 2.9 mm

宽度 1.5 mm

高度 1.09 mm

封装 SOT-23-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MUN2240T1G
型号: MUN2240T1G
描述:晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm
替代型号MUN2240T1G
型号/品牌 代替类型 替代型号对比

MUN2240T1G

ON Semiconductor 安森美

当前型号

当前型号

MUN2240T1

安森美

完全替代

MUN2240T1G和MUN2240T1的区别

DTC144TT1

安森美

类似代替

MUN2240T1G和DTC144TT1的区别

DTC144TT1G

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MUN2240T1G和DTC144TT1G的区别

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