开关晶体管 Switching Transistor
If your circuit"s specifications require a device that can handle high levels of voltage, "s PNP general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 200 MHz
额定电压DC -40.0 V
额定电流 -600 mA
额定功率 150 mW
针脚数 3
极性 PNP
耗散功率 150 mW
击穿电压集电极-发射极 40 V
集电极最大允许电流 0.6A
最小电流放大倍数hFE 100 @150mA, 2V
额定功率Max 150 mW
直流电流增益hFE 100
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 150 mW
安装方式 Surface Mount
引脚数 3
封装 SC-70-3
封装 SC-70-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MMBT4403WT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMBT4403WT1 安森美 | 类似代替 | MMBT4403WT1G和MMBT4403WT1的区别 |
MMBT4403T-7-F 美台 | 功能相似 | MMBT4403WT1G和MMBT4403T-7-F的区别 |
MMST4403-7-F 美台 | 功能相似 | MMBT4403WT1G和MMST4403-7-F的区别 |