MUN2114T1G

偏置电阻晶体管 Bias Resistor Transistor

- 双极 BJT - 单，预偏置 PNP - 预偏压 50 V 100 mA 230 mW 表面贴装型 SC-59

得捷:
TRANS PREBIAS PNP 50V 100MA SC59

立创商城:
PNP 双极数字晶体管 BRT

贸泽:
双极晶体管 - 预偏置 SS BR XSTR PNP 50V

艾睿:
The PNP MUN2114T1G digital transistor from ON Semiconductor is your alternative to traditional BJTs in that it can provide digital signal processing power. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 338 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans Digital BJT PNP 50V 100mA 3-Pin SC-59 T/R

Chip1Stop:
Trans Digital BJT PNP 50V 100mA 338mW Automotive 3-Pin SC-59 T/R

Verical:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-59 T/R

Newark:
# ON SEMICONDUCTOR  MUN2114T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 Ratio, SC-59

Win Source:
TRANS PREBIAS PNP 230MW SC59