MUN5233T1G

ON SEMICONDUCTOR  MUN5233T1G.  晶体管, 带电阻, 50V, 47K/4.7KΩ, SOT323

- 双极 BJT - 单，预偏置 NPN - 预偏压 50 V 100 mA 202 mW 表面贴装型 SC-70-3（SOT323）

欧时:
SS SC70 BR XSTR NPN 50V

得捷:
TRANS PREBIAS NPN 50V SC70-3

立创商城:
NPN Bipolar Digital Transistor BRT

e络盟:
晶体管 双极预偏置/数字, AEC-Q100, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率

艾睿:
Thanks to ON Semiconductor&s;s NPN MUN5233T1G digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA 310mW Automotive 3-Pin SC-70 T/R

TME:
Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT323; R1:4.7kΩ

Verical:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-70 T/R

Newark:
# ON SEMICONDUCTOR  MUN5233T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 Ratio, SOT-323