MUN2230T1G

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MUN2230T1G概述

偏置电阻晶体管 Bias Resistor Transistors

NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−59 package which is designed for low power surface mount applications.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Moisture Sensitivity Level: 1

• ESD Rating − Human Body Model: Class 1

  ESD Rating − Machine Model: Class B

• The SC−59 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel

Use the Device Number to order the 7 inch/3000 unit reel.

• Pb−Free Packages are Available

MUN2230T1G中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

无卤素状态 Halogen Free

极性 NPN

耗散功率 0.338 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 3 @5mA, 10V

额定功率Max 338 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 338 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MUN2230T1G
型号: MUN2230T1G
描述:偏置电阻晶体管 Bias Resistor Transistors
替代型号MUN2230T1G
型号/品牌 代替类型 替代型号对比

MUN2230T1G

ON Semiconductor 安森美

当前型号

当前型号

DTD113E

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MUN2230T1G和DTD113E的区别

MUN2230T1

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MUN2230T1G和MUN2230T1的区别

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