






偏置电阻晶体管 Bias Resistor Transistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−59 package which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: Class 1
ESD Rating − Machine Model: Class B
• The SC−59 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
• Pb−Free Packages are Available
额定电压DC 50.0 V
额定电流 100 mA
无卤素状态 Halogen Free
极性 NPN
耗散功率 0.338 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 3 @5mA, 10V
额定功率Max 338 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 338 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MUN2230T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
DTD113E 安森美 | 类似代替 | MUN2230T1G和DTD113E的区别 |
MUN2230T1 安森美 | 功能相似 | MUN2230T1G和MUN2230T1的区别 |