MUN5237T1G

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MUN5237T1G概述

偏置电阻晶体管 Bias Resistor Transistor

Digital Transistors BRT R1 = 47Ωk, R2 = 22Ωk

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MUN5237T1G中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

极性 NPN

耗散功率 310 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

额定功率Max 202 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 310 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-70-3

外形尺寸

封装 SC-70-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MUN5237T1G
型号: MUN5237T1G
描述:偏置电阻晶体管 Bias Resistor Transistor
替代型号MUN5237T1G
型号/品牌 代替类型 替代型号对比

MUN5237T1G

ON Semiconductor 安森美

当前型号

当前型号

MUN5237T1

安森美

完全替代

MUN5237T1G和MUN5237T1的区别

DDTC144WUA-7

美台

功能相似

MUN5237T1G和DDTC144WUA-7的区别

UN9210J

松下

功能相似

MUN5237T1G和UN9210J的区别

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