MMBT3904WT1G

ON SEMICONDUCTOR  MMBT3904WT1G  单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 300 hFE

- 双极 BJT - 单 NPN 40 V 200 mA 300MHz 150 mW 表面贴装型 SC-70-3（SOT323）

欧时:
SS SC70 GP XSTR NPN 40V

得捷:
TRANS NPN 40V 0.2A SC70-3

立创商城:
NPN 双极晶体管

贸泽:
双极晶体管 - 双极结型晶体管BJT 200mA 60V NPN

艾睿:
The NPN MMBT3904WT1G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Allied Electronics:
TRANSISTOR, SILICON; SOT-323; NPN; 40; 60; 6; 200 COLLECTOR; -55 TO +150; 833

安富利:
Trans GP BJT NPN 40V 0.2A 3-Pin SC-70 T/R

Chip1Stop:
Trans GP BJT NPN 40V 0.2A 150mW Automotive 3-Pin SC-70 T/R

Verical:
Trans GP BJT NPN 40V 0.2A Automotive 3-Pin SC-70 T/R

Newark:
# ON SEMICONDUCTOR  MMBT3904WT1G  Bipolar BJT Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 300 hFE

DeviceMart:
TRANS GP SS NPN 40V SOT323

Win Source:
TRANS NPN 40V 0.2A SOT323