MUN5132T1G

MUN 系列 50 V 100 mA 4.7 kOhm PNP 硅 偏置电阻 晶体管 - SOT-323

- 双极 BJT - 单，预偏置 PNP - 预偏压 50 V 100 mA 202 mW 表面贴装型 SC-70-3（SOT323）

得捷:
TRANS PREBIAS PNP 50V SC70-3

立创商城:
MUN5132T1G

艾睿:
In addition to offering some of the benefits of traditional BJTs, the PNP MUN5132T1G digital transistor, developed by ON Semiconductor, can be used in digital signal processing circuits as well. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 15@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

富昌:
MUN 系列 50 V 100 mA 4.7 kOhm PNP 硅 偏置电阻 晶体管 - SOT-323

Chip1Stop:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-70 T/R

Verical:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-70 T/R

Newark:
# ON SEMICONDUCTOR  MUN5132T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 Ratio, SC-70