MCH6661-TL-W

ON SEMICONDUCTOR  MCH6661-TL-W  双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V

双 N 通道 MOSFET，

得捷:
MOSFET 2N-CH 30V 1.8A SOT363

立创商城:
N沟道 30V 1.8A

欧时:
ON Semiconductor 双 Si N沟道 MOSFET MCH6661-TL-W, 1.8 A, Vds=30 V, 6引脚 SOT-363 SC-88封装

贸泽:
MOSFET NCH 1.7A 30V SOT-363

e络盟:
双路场效应管, MOSFET, N沟道, 30 V, 1.8 A, 0.145 ohm, SOT-363, 表面安装

艾睿:
As an alternative to traditional transistors, the MCH6661-TL-W power MOSFET from ON Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 800 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

Allied Electronics:
MCH6661-TL-W Dual N-channel MOSFET Transistor, 1.8 A, 30 V, 6-Pin SOT-363

安富利:
Trans MOSFET N-CH 30V 1.8A 6-Pin SOT-363 T/R

Verical:
Trans MOSFET N-CH 30V 1.8A 6-Pin MCPH T/R

Newark:
# ON SEMICONDUCTOR  MCH6661-TL-W  MOSFET Transistor, Dual N Channel, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V

力源芯城:
30V,1.8A,188mΩ,双N沟道功率MOSFET