









ON SEMICONDUCTOR MCH6664-TL-W 双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
双 P 通道 MOSFET,
### MOSFET ,ON Semiconductor
得捷:
MOSFET 2P-CH 30V 1.5A SOT363
立创商城:
P沟道 30V 1.5A
欧时:
ON Semiconductor 双 Si P沟道 MOSFET MCH6664-TL-W, 1.5 A, Vds=30 V, 6引脚 SOT-363 SC-88封装
e络盟:
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
艾睿:
Compared to traditional transistors, MCH6664-TL-W power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 800 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
MCH6664-TL-W Dual P-channel MOSFET Transistor, 1.5 A, 30 V, 6-Pin SOT-363
安富利:
Trans MOSFET P-CH 30V 1.5A 6-Pin SOT-363 T/R
Verical:
Trans MOSFET P-CH 30V 1.5A 6-Pin MCPH T/R
Newark:
# ON SEMICONDUCTOR MCH6664-TL-W MOSFET Transistor, Dual P Channel, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
力源芯城:
-30V,-1.5A,325mΩ,双P沟道功率MOSFET
针脚数 6
漏源极电阻 0.458 Ω
极性 Dual P-Channel
耗散功率 800 mW
阈值电压 2.6 V
漏源极电压Vds 30 V
连续漏极电流Ids 1.5A
上升时间 3.3 ns
输入电容Ciss 82pF @10VVds
额定功率Max 800 mW
下降时间 5.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 800 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-363
长度 2 mm
宽度 1.6 mm
高度 0.85 mm
封装 SOT-363
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 电源管理, 工业, Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17


