单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
Design various electronic circuits with this versatile PNP GP BJT from Technologies. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
频率 100 MHz
额定电压DC -80.0 V
额定电流 -800 mA
极性 PNP
耗散功率 0.33 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 100 @100mA, 1V
额定功率Max 330 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 330 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Last Time Buy
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
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