MMBT3904K

NPN外延硅晶体管，通用晶体管 NPN Epitaxial Silicon Transistor, General Purpose Transistor

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 60V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 40V 集电极连续输出电流ICCollector CurrentIC| 200mA/0.2A 截止频率fTTranstion FrequencyfT| 300Mhz 直流电流增益hFEDC Current GainhFE| 30~300 管压降VCE（sat）Collector-Emitter Saturation Voltage| 200mV~300mV 耗散功率PcPower Dissipation| 350mW/0.35W Description & Applications| This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. 描述与应用| 这个装置是专为通用放大器和开关。 有用的动态范围扩展到100毫安作为开关 作为一个放大器100兆赫。