MUN2215T1G

NPN硅偏置电阻晶体管 NPN SILICON BIAS RESISTOR TRANSISTOR

- 双极 BJT - 单，预偏置 NPN - 预偏压 50 V 100 mA 338 mW 表面贴装型 SC-59

立创商城:
MUN2215T1G

得捷:
TRANS PREBIAS NPN 50V 100MA SC59

贸泽:
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V

艾睿:
In addition to offering some of the benefits of traditional BJTs, the NPN MUN2215T1G digital transistor, developed by ON Semiconductor, can be used in digital signal processing circuits as well. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 160@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 338 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

Chip1Stop:
Trans Digital BJT NPN 50V 100mA 338mW Automotive 3-Pin SC-59 T/R

Verical:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-59 T/R

Win Source:
NPN SILICON BIAS RESISTOR TRANSISTOR