偏置电阻晶体管 Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−70/SOT−323 package which is designed for low power surface mount applications.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•The SC−70/SOT−323 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.
•Available in 8 mm embossed tape and reel − Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel.
•Pb−Free Packages are Available
额定电压DC -50.0 V
额定电流 -100 mA
无卤素状态 Halogen Free
极性 PNP
耗散功率 0.31 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 80 @5mA, 10V
最大电流放大倍数hFE 80
额定功率Max 202 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 310 mW
安装方式 Surface Mount
引脚数 3
封装 SC-70-3
长度 2.1 mm
宽度 1.24 mm
高度 0.85 mm
封装 SC-70-3
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MUN5114T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MUN5114T1 安森美 | 完全替代 | MUN5114T1G和MUN5114T1的区别 |
MUN5133T1 安森美 | 完全替代 | MUN5114T1G和MUN5133T1的区别 |
MUN5113T3 安森美 | 完全替代 | MUN5114T1G和MUN5113T3的区别 |