MUN5114T1G

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MUN5114T1G概述

偏置电阻晶体管 Bias Resistor Transistor

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

  This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−70/SOT−323 package which is designed for low power surface mount applications.

Features

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•The SC−70/SOT−323 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.

•Available in 8 mm embossed tape and reel − Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel.

•Pb−Free Packages are Available

MUN5114T1G中文资料参数规格
技术参数

额定电压DC -50.0 V

额定电流 -100 mA

无卤素状态 Halogen Free

极性 PNP

耗散功率 0.31 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

最大电流放大倍数hFE 80

额定功率Max 202 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 310 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-70-3

外形尺寸

长度 2.1 mm

宽度 1.24 mm

高度 0.85 mm

封装 SC-70-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

在线购买MUN5114T1G
型号: MUN5114T1G
描述:偏置电阻晶体管 Bias Resistor Transistor
替代型号MUN5114T1G
型号/品牌 代替类型 替代型号对比

MUN5114T1G

ON Semiconductor 安森美

当前型号

当前型号

MUN5114T1

安森美

完全替代

MUN5114T1G和MUN5114T1的区别

MUN5133T1

安森美

完全替代

MUN5114T1G和MUN5133T1的区别

MUN5113T3

安森美

完全替代

MUN5114T1G和MUN5113T3的区别

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