MMBT5550L: 高电压 NPN 双极晶体管
Look no further than "s NPN general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
额定电压DC 140 V
额定电流 600 mA
极性 NPN
耗散功率 225 mW
击穿电压集电极-发射极 140 V
最小电流放大倍数hFE 60 @10mA, 5V
额定功率Max 225 mW
直流电流增益hFE 60
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 0.94 mm
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MMBT5550LT3G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMBT5550LT1G 安森美 | 类似代替 | MMBT5550LT3G和MMBT5550LT1G的区别 |
KST5550MTF 安森美 | 类似代替 | MMBT5550LT3G和KST5550MTF的区别 |
PMBT5550@215 恩智浦 | 类似代替 | MMBT5550LT3G和PMBT5550@215的区别 |