低噪声晶体管 Low Noise Transistor
Low Noise Transistor PNP Silicon
Features
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
得捷:
TRANS PNP 50V 0.05A SOT23-3
立创商城:
MMBT5087LT3G
贸泽:
Bipolar Transistors - BJT 50mA 50V PNP
艾睿:
This specially engineered PNP MMBT5087LT3G GP BJT from ON Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 3 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 3 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans GP BJT PNP 50V 0.05A 3-Pin SOT-23 T/R
Verical:
Trans GP BJT PNP 50V 0.05A Automotive 3-Pin SOT-23 T/R
Win Source:
TRANS PNP 50V 0.05A SOT-23
频率 40 MHz
额定电压DC -50.0 V
额定电流 -50.0 mA
极性 PNP
耗散功率 0.3 W
增益频宽积 40 MHz
击穿电压集电极-发射极 50 V
集电极最大允许电流 0.05A
最小电流放大倍数hFE 250 @100µA, 5V
额定功率Max 300 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 0.94 mm
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMBT5087LT3G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMBT5087LT1 安森美 | 完全替代 | MMBT5087LT3G和MMBT5087LT1的区别 |
MMBT5087LT1G 安森美 | 类似代替 | MMBT5087LT3G和MMBT5087LT1G的区别 |
MMBT5087 安森美 | 类似代替 | MMBT5087LT3G和MMBT5087的区别 |