MMSS8050 系列 25 V 1.5 A NPN 硅 塑料-密封 晶体管 - SOT-23-3
Look no further than " NPN general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 100 MHz
耗散功率 0.3 W
击穿电压集电极-发射极 25 V
最小电流放大倍数hFE 120 @100mA, 1V
额定功率Max 625 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MMSS8050-L-TP Micro Commercial Components 美微科 | 当前型号 | 当前型号 |