MMSS8050-H 系列 25 V 1.5 A NPN 硅 塑料密封 晶体管-SOT-23
If you require a general purpose BJT that can handle high voltages, then the NPN BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.
频率 100 MHz
耗散功率 0.3 W
增益频宽积 100 MHz
击穿电压集电极-发射极 25 V
最小电流放大倍数hFE 120 @100mA, 1V
最大电流放大倍数hFE 350
额定功率Max 625 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MMSS8050-H-TP Micro Commercial Components 美微科 | 当前型号 | 当前型号 |
MMSS8050-L-TP 美微科 | 完全替代 | MMSS8050-H-TP和MMSS8050-L-TP的区别 |