MUN5314DW1T1G

ON SEMICONDUCTOR  MUN5314DW1T1G  晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率, SOT-363

双电阻器双数字，

得捷:
TRANS PREBIAS 1NPN 1PNP 50V SC88

立创商城:
互补双极数字晶体管 BRT

欧时:
ON Semiconductor MUN5314DW1T1G 双 NPN + PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:0.21, 6引脚

e络盟:
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率

艾睿:
Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The npn and PNP MUN5314DW1T1G digital transistor from ON Semiconductor is your solution. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.

Allied Electronics:
MUN5314DW1T1G NPN+PNP Digi Transistor, 100 mA 50V 10 kOhm, Ratio Of.21, 6-Pin SC-88

安富利:
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SC-88 T/R

Chip1Stop:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SC-88 T/R

TME:
Transistor: NPN / PNP; bipolar; BRT, complementary; 50V; 0.1A

Verical:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SC-88 T/R

Newark:
# ON SEMICONDUCTOR  MUN5314DW1T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 Ratio, SOT-363

Win Source:
TRANS PREBIAS NPN/PNP SOT363