MUN2113T1G

MUN 系列 50 V 100 mA 47 kOhm PNP 硅 偏置电阻晶体管 - SC-59

- 双极 BJT - 单，预偏置 PNP - 预偏压 50 V 100 mA 230 mW 表面贴装型 SC-59

立创商城:
PNP 双极数字晶体管 BRT

得捷:
TRANS PREBIAS PNP 50V 100MA SC59

e络盟:
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 47 kohm, 47 kohm, 1 电阻比率

艾睿:
In addition to offering some of the benefits of traditional BJTs, the PNP MUN2113T1G digital transistor, developed by ON Semiconductor, can be used in digital signal processing circuits as well. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 300 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

Chip1Stop:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-59 T/R

Verical:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-59 T/R

Win Source:
TRANS PREBIAS PNP 230MW SC59