MUN5213T1G

ON SEMICONDUCTOR  MUN5213T1G  晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率, SC-70

- 双极 BJT - 单，预偏置 NPN - 预偏压 表面贴装型 SC-70-3（SOT323）

欧时:
ON Semiconductor, MUN5213T1G

得捷:
TRANS PREBIAS NPN 50V SC70-3

立创商城:
NPN 双极数字晶体管 BRT

e络盟:
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

艾睿:
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT&s;s within? Look no further than the NPN MUN5213T1G digital transistor from ON Semiconductor. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

安富利:
* Simplifies Circuit Design * Reduces Board Space * Reduces Component Count * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-70 T/R

TME:
Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT323; R1:47kΩ

Verical:
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R

Newark:
# ON SEMICONDUCTOR  MUN5213T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 47 kohm, 47 kohm, 1 Ratio, SC-70

Win Source:
TRANS PREBIAS NPN 202MW SC70-3