PNP硅通用高压晶体管 PNP Silicon General Purpose High Voltage Transistor
Bipolar BJT Transistor PNP 300V 150mA 50MHz 150mW Surface Mount SC-59
立创商城:
MSB92T1G
得捷:
TRANS PNP 300V 0.15A SC59
贸泽:
Bipolar Transistors - BJT SS HV XSTR PNP 300V
艾睿:
Implement this PNP MSB92T1G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.
Chip1Stop:
Trans GP BJT PNP 300V 0.15A Automotive 3-Pin SC-59 T/R
Win Source:
TRANS PNP 300V 0.15A SC-59
额定电压DC -300 V
额定电流 -500 mA
极性 PNP
耗散功率 150 mW
增益频宽积 50 MHz
击穿电压集电极-发射极 300 V
集电极最大允许电流 0.15A
最小电流放大倍数hFE 25 @30mA, 10V
额定功率Max 150 mW
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 150 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.5 mm
高度 1.09 mm
封装 SOT-23-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MSB92T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MSB92T1 安森美 | 完全替代 | MSB92T1G和MSB92T1的区别 |