PNP硅通用高压晶体管 PNP Silicon General Purpose High Voltage Transistor
Jump-start your electronic circuit design with this versatile PNP GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 50 MHz
额定电压DC -300 V
额定电流 -500 mA
针脚数 3
极性 PNP
耗散功率 150 mW
击穿电压集电极-发射极 300 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 120 @1mA, 10V
额定功率Max 150 mW
直流电流增益hFE 120
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 150 mW
安装方式 Surface Mount
引脚数 3
封装 SC-70-3
封装 SC-70-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MSB92ASWT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MSB92AWT1G 安森美 | 完全替代 | MSB92ASWT1G和MSB92AWT1G的区别 |
MSB92ASWT1 安森美 | 完全替代 | MSB92ASWT1G和MSB92ASWT1的区别 |
MSB92WT1G 安森美 | 类似代替 | MSB92ASWT1G和MSB92WT1G的区别 |