MMBT2222AM3T5G

ON SEMICONDUCTOR  MMBT2222AM3T5G  单晶体管 双极, NPN, 40 V, 300 MHz, 265 mW, 600 mA, 35 hFE

Jump-start your electronic circuit design with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 640 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.