MSB92AS1WT1G

PNP硅通用高压晶体管 PNP Silicon General Purpose High Voltage Transistor

- 双极 BJT - 单 PNP 50MHz 表面贴装型 SC-70-3（SOT323）

立创商城:
MSB92AS1WT1G

得捷:
TRANS PNP 300V 0.5A SC70-3

贸泽:
双极晶体管 - 双极结型晶体管BJT SSP SC70 HV XSTR PNP 300V

艾睿:
Compared to other transistors, the PNP MSB92AS1WT1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans GP BJT PNP 300V 0.5A 3-Pin SC-70 T/R

Chip1Stop:
Trans GP BJT PNP 300V 0.5A 3-Pin SC-70 T/R

Verical:
Trans GP BJT PNP 300V 0.5A 150mW 3-Pin SC-70 T/R