MMSS8550 系列 25 V 1.5 A PNP 硅 塑料-密封 晶体管 - SOT-23-3
Look no further than " PNP general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 625 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 6 V.
频率 100 MHz
耗散功率 0.625 W
增益频宽积 100 MHz
击穿电压集电极-发射极 25 V
最小电流放大倍数hFE 120 @100mA, 1V
最大电流放大倍数hFE 350
额定功率Max 625 mW
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 625 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MMSS8550-L-TP Micro Commercial Components 美微科 | 当前型号 | 当前型号 |
8550SS-C-AP 美微科 | 完全替代 | MMSS8550-L-TP和8550SS-C-AP的区别 |