MMST4403-TP 编带
This specially engineered PNP GP BJT from comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
频率 200 MHz
额定电压DC -40.0 V
额定电流 -600 mA
极性 PNP
耗散功率 0.2 W
击穿电压集电极-发射极 40 V
集电极最大允许电流 0.6A
最小电流放大倍数hFE 100 @150mA, 2V
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323
封装 SOT-323
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMST4403-TP Micro Commercial Components 美微科 | 当前型号 | 当前型号 |
MMBT4403-TP 美微科 | 类似代替 | MMST4403-TP和MMBT4403-TP的区别 |
MMST4403-7 美台 | 类似代替 | MMST4403-TP和MMST4403-7的区别 |
MMBT4403LT1G 安森美 | 功能相似 | MMST4403-TP和MMBT4403LT1G的区别 |