MUN5216DW1T1G

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MUN5216DW1T1G概述

MUN 系列 50V 100 mA 4.7 kOhm NPN 硅 双 偏置电阻 晶体管 SOT-363

Dual Bias ResistorTransistors

NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1G series, two BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MUN5216DW1T1G中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

无卤素状态 Halogen Free

极性 N-Channel, NPN

耗散功率 0.385 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 160 @5mA, 10V

额定功率Max 250 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 385 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 SC-70-6

外形尺寸

封装 SC-70-6

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

在线购买MUN5216DW1T1G
型号: MUN5216DW1T1G
描述:MUN 系列 50V 100 mA 4.7 kOhm NPN 硅 双 偏置电阻 晶体管 SOT-363
替代型号MUN5216DW1T1G
型号/品牌 代替类型 替代型号对比

MUN5216DW1T1G

ON Semiconductor 安森美

当前型号

当前型号

MUN5216DW1T1

安森美

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