MUN 系列 50V 100 mA 4.7 kOhm NPN 硅 双 偏置电阻 晶体管 SOT-363
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1G series, two BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
额定电压DC 50.0 V
额定电流 100 mA
无卤素状态 Halogen Free
极性 N-Channel, NPN
耗散功率 0.385 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 160 @5mA, 10V
额定功率Max 250 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 385 mW
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
封装 SC-70-6
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MUN5216DW1T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MUN5216DW1T1 安森美 | 类似代替 | MUN5216DW1T1G和MUN5216DW1T1的区别 |
DDC143TU-7 美台 | 功能相似 | MUN5216DW1T1G和DDC143TU-7的区别 |
MUN5216T1 安森美 | 功能相似 | MUN5216DW1T1G和MUN5216T1的区别 |