MUN5316DW1T1G

MUN 系列 50 V 100 mA 4.7 kOhm NPN/PNP 双 偏置电阻晶体管 - SOT-363

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| -50V/50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| -50V/50V 集电极连续输出电流IC Collector CurrentIC| -100mA/100mA Q1基极输入电阻R1 Input ResistanceR1| 4.7KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2| ∞ Q1电阻比R1/R2 Q1 Resistance Ratio| Q2基极输入电阻R1 Input ResistanceR1| 4.7KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2| ∞ Q2电阻比R1/R2 Q2 Resistance Ratio| 直流电流增益hFE DC Current GainhFE| 350 截止频率fT Transtion FrequencyfT| 耗散功率Pc Power Dissipation| 250mW/0.25W Description & Applications| Features •Dual Bias Resistor Transistors •NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Available in 8 mm, 7 inch/3000 Unit Tape and Reel •These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 描述与应用| 特点 •双偏置电阻 •NPN和PNP硅表面贴装晶体管与单片偏置电阻网络 •简化电路设计 •缩小板级空间 •减少元件数 •8毫米，7 inch/3000单位带和卷轴 •这些器件是无铅，无卤/ BFR免费，并符合RoHS标准