MUN5133DW1T1G

双偏置电阻晶体管 Dual Bias Resistor Transistors

- 双极 BJT - 阵列 - 预偏置 2 个 PNP 预偏压式（双） 50V 100mA - 250mW 表面贴装型 SC-88/SC70-6/SOT-363

立创商城:
MUN5133DW1T1G

得捷:
TRANS PREBIAS 2PNP 50V SC88

艾睿:
Thanks to ON Semiconductor, easily integrate PNP MUN5133DW1T1G digital transistors into digital signal processing circuits. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans Digital BJT PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R

TME:
Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 187mW; SOT363; R1:4.7kΩ

Verical:
Trans Digital BJT PNP 50V 100mA Automotive 6-Pin SC-88 T/R

Win Source:
TRANS 2PNP PREBIAS 0.25W SOT363