NPN 25 V 225 mW 表面贴装 硅 晶体管 - SOT-23
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 3 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 3 V.
频率 650 MHz
额定电压DC 25.0 V
额定电流 4.00 mA
无卤素状态 Halogen Free
针脚数 3
极性 NPN
耗散功率 225 mW
击穿电压集电极-发射极 25 V
最小电流放大倍数hFE 120 @4mA, 10V
额定功率Max 225 mW
直流电流增益hFE 120
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 225 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MMBTH10-4LT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMBTH10-4LT1 安森美 | 完全替代 | MMBTH10-4LT1G和MMBTH10-4LT1的区别 |
KST10MTF 飞兆/仙童 | 功能相似 | MMBTH10-4LT1G和KST10MTF的区别 |
MMBTH11 飞兆/仙童 | 功能相似 | MMBTH10-4LT1G和MMBTH11的区别 |