ON SEMICONDUCTOR MUN5215T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, SOT-323
通用 NPN ,最大 1A,On Semiconductor
### 标准
带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。
得捷:
TRANS PREBIAS NPN 50V SC70-3
欧时:
ON Semiconductor, MUN5215T1G
立创商城:
NPN 双极数字晶体管 BRT
e络盟:
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm
艾睿:
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT&s;s within? Look no further than the NPN MUN5215T1G digital transistor from ON Semiconductor. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 160@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
Allied Electronics:
ON Semi MUN5215T1G NPN Bipolar Transistor, 0.1 A, 50 V, 3-Pin SC-70
安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R
Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-70 T/R
Verical:
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R
Newark:
# ON SEMICONDUCTOR MUN5215T1G Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 10 kohm, SOT-323
Win Source:
TRANS PREBIAS NPN 202MW SC70-3
额定电压DC 50.0 V
额定电流 100 mA
无卤素状态 Halogen Free
极性 NPN
耗散功率 0.31 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 160 @5mA, 10V
额定功率Max 202 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 310 mW
安装方式 Surface Mount
引脚数 3
封装 SC-70-3
长度 2.2 mm
宽度 1.24 mm
高度 0.85 mm
封装 SC-70-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 工业, 车用, Power Management, Automotive, Industrial, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MUN5215T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MUN5215T1 安森美 | 类似代替 | MUN5215T1G和MUN5215T1的区别 |
DTC114GUAT106 罗姆半导体 | 功能相似 | MUN5215T1G和DTC114GUAT106的区别 |
PDTC114TU,115 恩智浦 | 功能相似 | MUN5215T1G和PDTC114TU,115的区别 |