偏置电阻晶体管 Bias Resistor Transistor
- 双极 BJT - 单,预偏置 PNP - 预偏压 表面贴装型 SC-70-3(SOT323)
欧时:
ON Semiconductor, MUN5135T1G
得捷:
TRANS PREBIAS PNP 50V SC70-3
立创商城:
PNP 双极数字晶体管 BRT
e络盟:
晶体管 双极预偏置/数字, 单路PNP, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
艾睿:
If you require the digital form of a traditional BJT for your signal processing needs, then the PNP MUN5135T1G digital transistor from ON Semiconductor is for you. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans Digital BJT PNP 50V 100mA 3-Pin SC-70 T/R
Chip1Stop:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-70 T/R
Verical:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-70 T/R
Newark:
Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 2.2 kohm, 47 kohm
Win Source:
TRANS PREBIAS PNP 202MW SC70-3
额定电压DC -50.0 V
额定电流 -100 mA
无卤素状态 Halogen Free
极性 PNP
耗散功率 0.31 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 80 @5mA, 10V
最大电流放大倍数hFE 80
额定功率Max 202 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 310 mW
安装方式 Surface Mount
引脚数 3
封装 SC-70-3
宽度 1.24 mm
封装 SC-70-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MUN5135T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MUN5135T1 安森美 | 类似代替 | MUN5135T1G和MUN5135T1的区别 |
SMUN2111T1 安森美 | 类似代替 | MUN5135T1G和SMUN2111T1的区别 |
PDTA123JT,215 恩智浦 | 功能相似 | MUN5135T1G和PDTA123JT,215的区别 |