MUN5135T1G

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MUN5135T1G概述

偏置电阻晶体管 Bias Resistor Transistor

- 双极 BJT - 单,预偏置 PNP - 预偏压 表面贴装型 SC-70-3(SOT323)


欧时:
ON Semiconductor, MUN5135T1G


得捷:
TRANS PREBIAS PNP 50V SC70-3


立创商城:
PNP 双极数字晶体管 BRT


e络盟:
晶体管 双极预偏置/数字, 单路PNP, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率


艾睿:
If you require the digital form of a traditional BJT for your signal processing needs, then the PNP MUN5135T1G digital transistor from ON Semiconductor is for you. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.


安富利:
Trans Digital BJT PNP 50V 100mA 3-Pin SC-70 T/R


Chip1Stop:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-70 T/R


Verical:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-70 T/R


Newark:
Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 2.2 kohm, 47 kohm


Win Source:
TRANS PREBIAS PNP 202MW SC70-3


MUN5135T1G中文资料参数规格
技术参数

额定电压DC -50.0 V

额定电流 -100 mA

无卤素状态 Halogen Free

极性 PNP

耗散功率 0.31 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

最大电流放大倍数hFE 80

额定功率Max 202 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 310 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-70-3

外形尺寸

宽度 1.24 mm

封装 SC-70-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MUN5135T1G
型号: MUN5135T1G
描述:偏置电阻晶体管 Bias Resistor Transistor
替代型号MUN5135T1G
型号/品牌 代替类型 替代型号对比

MUN5135T1G

ON Semiconductor 安森美

当前型号

当前型号

MUN5135T1

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