ON SEMICONDUCTOR MUN5214T1G 晶体管 双极预偏置/数字, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率, SC-70 新
Digital Transistors BRT
R1 = 10 kΩ, R2 = 47 kΩ
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
额定电压DC 50.0 V
额定电流 100 mA
无卤素状态 Halogen Free
极性 NPN
耗散功率 0.31 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 80 @5mA, 10V
最大电流放大倍数hFE 80
额定功率Max 202 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 310 mW
安装方式 Surface Mount
引脚数 3
封装 SC-70-3
长度 2.1 mm
宽度 1.24 mm
高度 0.85 mm
封装 SC-70-3
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MUN5214T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MUN5213T1G 安森美 | 完全替代 | MUN5214T1G和MUN5213T1G的区别 |
MUN5214T1 安森美 | 类似代替 | MUN5214T1G和MUN5214T1的区别 |
MUN5213T1 安森美 | 类似代替 | MUN5214T1G和MUN5213T1的区别 |