MUN5131DW1T1G

双偏置电阻晶体管 Dual Bias Resistor Transistors

- 双极 BJT - 阵列 - 预偏置 2 个 PNP 预偏压式（双） 50V 100mA - 250mW 表面贴装型 SC-88/SC70-6/SOT-363

得捷:
TRANS PREBIAS 2PNP 50V SC88

立创商城:
MUN5131DW1T1G

贸泽:
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP

艾睿:
Compared to traditional BJ transistors, the PNP MUN5131DW1T1G digital transistor from ON Semiconductor is meant to be used with digital signal processing circuits. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 8@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.

Chip1Stop:
Trans Digital BJT PNP 50V 100mA Automotive 6-Pin SC-88 T/R

TME:
Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 187mW; SOT363; R1:2.2kΩ

Verical:
Trans Digital BJT PNP 50V 100mA Automotive 6-Pin SC-88 T/R