






双偏置电阻晶体管 Dual Bias Resistor Transistors
- 双极 BJT - 阵列 - 预偏置 2 个 PNP 预偏压式(双) 50V 100mA - 250mW 表面贴装型 SC-88/SC70-6/SOT-363
得捷:
TRANS PREBIAS 2PNP 50V SC88
立创商城:
双 PNP 双极数字晶体管 BRT
e络盟:
晶体管 双极预偏置/数字, 双路 PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
艾睿:
If you require the digital form of a traditional BJT for your signal processing needs, then the PNP MUN5135DW1T1G digital transistor from ON Semiconductor is for you. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
Chip1Stop:
Trans Digital BJT PNP 50V 100mA Automotive 6-Pin SC-88 T/R
TME:
Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 187mW; SOT363; R1:2.2kΩ
Verical:
Trans Digital BJT PNP 50V 100mA Automotive 6-Pin SC-88 T/R
Win Source:
TRANS 2PNP PREBIAS 0.25W SOT363
额定电压DC -50.0 V
额定电流 -100 mA
无卤素状态 Halogen Free
极性 PNP, P-Channel
耗散功率 0.385 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 80 @5mA, 10V
额定功率Max 250 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 385 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-363
封装 SOT-363
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MUN5135DW1T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
PUMB10,115 恩智浦 | 功能相似 | MUN5135DW1T1G和PUMB10,115的区别 |
MUN5135DW1T1 安森美 | 功能相似 | MUN5135DW1T1G和MUN5135DW1T1的区别 |