MUN5315DW1T1G

MUN 系列 50 V 100 mA 10 kOhm NPN/PNP 双 偏置电阻晶体管 - SOT-363

- 双极 BJT - 阵列 - 预偏置 1 个 NPN，1 个 PNP - 预偏压式（双） 50V 100mA 250mW 表面贴装型 SC-88/SC70-6/SOT-363

得捷:
TRANS PREBIAS 1NPN 1PNP 50V SC88

立创商城:
MUN5315DW1T1G

艾睿:
Look no further than ON Semiconductor&s;s npn and PNP MUN5315DW1T1G digital transistor&s;s, the ideal component to use when designing a digital signal processing unit. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 160@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a dual configuration.

安富利:
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R

Chip1Stop:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SC-88 T/R

Verical:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SC-88 T/R

Win Source:
TRANS PREBIAS NPN/PNP SOT363