MUN5231DW1T1G

双偏置电阻晶体管 Dual Bias Resistor Transistors

- 双极 BJT - 阵列 - 预偏置 2 个 NPN 预偏压式（双） 50V 100mA - 250mW 表面贴装型 SC-88/SC70-6/SOT-363

立创商城:
双 NPN 偏置电阻晶体管 BRT

得捷:
TRANS 2NPN PREBIAS 0.25W SOT363

艾睿:
In contrast to traditional transistors, ON Semiconductor&s;s NPN MUN5231DW1T1G digital transistor&s;s can be used in a wide variety of digital signal processing circuits. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 8@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@5mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a dual configuration.

Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SC-88 T/R

Verical:
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R