MUN5136DW1T1G

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MUN5136DW1T1G概述

双偏置电阻晶体管 Dual Bias Resistor Transistors

Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single

device. In the MUN5111DW1T1 series,two BRT devices are housed in the SOT−363 package which is ideal for low−power surface mount applications where board space is at a premium.

Features

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•Pb−Free Packages are Available

MUN5136DW1T1G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 PNP

耗散功率 0.385 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

额定功率Max 250 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 385 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 TSSOP-6

外形尺寸

封装 TSSOP-6

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MUN5136DW1T1G
型号: MUN5136DW1T1G
描述:双偏置电阻晶体管 Dual Bias Resistor Transistors

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