SOT-323 NPN 160V 0.2A
If your circuit"s specifications require a device that can handle high levels of voltage, " NPN general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 5 V.
频率 300 MHz
额定电压DC 160 V
额定电流 200 mA
极性 NPN
耗散功率 200 mW
增益频宽积 300 MHz
击穿电压集电极-发射极 160 V
集电极最大允许电流 0.2A
最小电流放大倍数hFE 80 @10mA, 5V
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323-3
长度 1.8 mm
宽度 1.35 mm
高度 1.2 mm
封装 SOT-323-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMST5551-TP Micro Commercial Components 美微科 | 当前型号 | 当前型号 |
MMST5551-7-F 美台 | 类似代替 | MMST5551-TP和MMST5551-7-F的区别 |
MMST5551-TP-HF 美微科 | 功能相似 | MMST5551-TP和MMST5551-TP-HF的区别 |