MAGX-001090-600L00

氮化镓HEMT的SiC脉冲功率晶体管共源配置 GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration

RF Mosfet HEMT 50V 600mA 1.03GHz ~ 1.09GHz 21.3dB 600W

得捷:
TRANSISTOR GAN 600W

贸泽:
RF JFET Transistors 1030-1090MHz 600W pk GaN Flanged

Verical:
Trans JFET N-CH 82A GaN HEMT 3-Pin