放大器晶体管 Amplifier Transistors
The PNP general purpose bipolar junction transistor, developed by , is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 625 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 4 V.
频率 50 MHz
额定电压DC -60.0 V
额定电流 -500 mA
极性 P-Channel
耗散功率 0.625 W
击穿电压集电极-发射极 60 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 100 @100mA, 1V
额定功率Max 625 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 625 mW
安装方式 Through Hole
引脚数 3
封装 TO-92-3
封装 TO-92-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MPSA55RLRAG ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MPSA55G 安森美 | 类似代替 | MPSA55RLRAG和MPSA55G的区别 |
MPSA55RLRA 安森美 | 类似代替 | MPSA55RLRAG和MPSA55RLRA的区别 |
2N3905TF 飞兆/仙童 | 功能相似 | MPSA55RLRAG和2N3905TF的区别 |