MRFE6S9200HR3

射频金属氧化物半导体场效应RF MOSFET晶体管 HV6E 900MHZ 200W NI880H

RF Mosfet LDMOS 28V 1.4A 880MHz 21dB 58W NI-880

得捷:
RF ULTRA HIGH FREQUENCY BAND, N-

贸泽:
射频金属氧化物半导体场效应RF MOSFET晶体管 HV6E 900MHZ 200W NI880H

艾睿:
Trans RF MOSFET N-CH 66V 3-Pin NI-880 T/R

Win Source:
FET RF 66V 880MHZ NI-880