MPSA13 系列 30 V 500 mA 表面贴装 NPN 硅 达林顿 晶体管 - TO-92-3
Do you need a device that can yield much higher current gains? Thanks to , the NPN Darlington transistor can amplify a current to meet your needs. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 10000@100mA@5 V|5000@10mA@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. This Darlington transistor array"s maximum emitter base voltage is 10 V. Its maximum power dissipation is 1500 mW. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V.
极性 NPN
耗散功率 1.5 W
击穿电压集电极-发射极 30 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 5000
最大电流放大倍数hFE 5000 @10mA, 5V
额定功率Max 1.5 W
工作温度Max 150 ℃
工作温度Min -55 ℃
增益带宽 125MHz Min
耗散功率Max 1500 mW
安装方式 Through Hole
引脚数 3
封装 TO-92-3
长度 4.7 mm
宽度 3.68 mm
高度 4.7 mm
封装 TO-92-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Ammo Pack
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MPSA13-AP Micro Commercial Components 美微科 | 当前型号 | 当前型号 |
MPSA13 NTE Electronics | 类似代替 | MPSA13-AP和MPSA13的区别 |
MPSA14RLRAG 安森美 | 功能相似 | MPSA13-AP和MPSA14RLRAG的区别 |
MPSA13ZL1G 安森美 | 功能相似 | MPSA13-AP和MPSA13ZL1G的区别 |