SOT-323 NPN 300V 0.2A
If you require a general purpose BJT that can handle high voltages, then the NPN BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.
频率 50 MHz
额定电压DC 300 V
额定电流 200 mA
极性 NPN
耗散功率 0.2 W
击穿电压集电极-发射极 300 V
集电极最大允许电流 0.2A
最小电流放大倍数hFE 40 @30mA, 10V
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323
封装 SOT-323
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MMSTA42-TP Micro Commercial Components 美微科 | 当前型号 | 当前型号 |
MMSTA42-7 美台 | 完全替代 | MMSTA42-TP和MMSTA42-7的区别 |
MMSTA42-7-F 美台 | 功能相似 | MMSTA42-TP和MMSTA42-7-F的区别 |
MMSTA42 美微科 | 功能相似 | MMSTA42-TP和MMSTA42的区别 |