MUN2136T1G

MUN2136T1G图片1
MUN2136T1G图片2
MUN2136T1G图片3
MUN2136T1G图片4
MUN2136T1G图片5
MUN2136T1G图片6
MUN2136T1G概述

偏置电阻晶体管 Bias Resistor Transistors

PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−59 package which is designed for low power surface mount applications.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Moisture Sensitivity Level: 1

• ESD Rating − Human Body Model: Class 1

   − Machine Model: Class B

• The SC−59 Package Can be Soldered Using Wave or Reflow

• The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die

• Pb−Free Packages are Available

MUN2136T1G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 PNP

耗散功率 600 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

额定功率Max 230 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 600 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MUN2136T1G
型号: MUN2136T1G
描述:偏置电阻晶体管 Bias Resistor Transistors

 锐单商城 - 一站式电子元器件采购平台  

 深圳锐单电子有限公司